n-type Czochralski Si was doped or co-doped in the melt with various group-IV elements (Sn, C, Pb) and was irradiated with 1MeV electrons to a fluence of 1016/cm2. The irradiation-induced electrically active defects were studied by deep level transient spectroscopy. It was shown that while Sn was an efficient vacancy trap, leading to the formation of SnV centers, no specific Pb-related deep levels were found in the upper half of the band-gap. The dominant electron trap was the A center, while similar concentrations of SnVs were formed in Sn- and Pb+Sn-doped n-Czochralski material. A number of as yet unidentified deep levels with smaller concentrations had also been observed, together with some grown-in peaks, whereof some could be H or C and lead related.

Electrically Active Defects in Irradiated n-Type Czochralski Silicon Doped with Group-IV Impurities. M.L.David, E.Simoen, C.Claeys, V.Neimash, M.Krasko, A.Kraitchinskii, V.Voytovych, A.Kabaldin, J.F.Barbot: Journal of Physics - Condensed Matter, 2005, 17[22], S2255-66