The influence of preliminary treatment in H plasma on elimination of radiation defects and formation of thermal donors was studied in detector structures made of standard float-zone Si. The detectors were irradiated with 3.5MeV electrons and annealed at 50 to 350C. It was found that preliminary hydrogenation at 300C led to the disappearance of divacancies and vacancy–O complexes at lower annealing temperatures. The annealing of hydrogenated and irradiated crystals was accompanied by H redistribution and formation of H-related donors.

Elimination and Formation of Electrically Active Defects in Hydrogenated Silicon Particle Detectors Irradiated with Electrons. L.F.Makarenko, F.P.Korshunov, S.B.Lastovski, N.M.Kazuchits, M.S.Rusetsky, E.Fretwurst, G.Lindström, M.Moll, I.Pintilie, N.I.Zamiatin: Nuclear Instruments and Methods in Physics Research Section A, 2005, 552[1-2], 77-81