Vacancy-related defects in Si were explored with deep level transient spectroscopy. The measurements were performed on-line on irradiated p-type Si and a new trap with the signature: Epa = 0.18eV, σpa = 6.5 x 10-15cm2, present only at cryogenic temperatures, was studied. The bi-stable B-vacancy complex was studied. Its configuration at low temperatures was investigated, and was found to have the signature: Epa = 0.11eV, σpa = 8.2 x 10-15cm2.

On-Line DLTS Investigations of Vacancy Related Defects in Low-Temperature Electron Irradiated Boron-Doped Si. N.R.Zangenberg, A.Nylandsted Larsen: Applied Physics A, 2005, 80[5], 1081-6