A deep level transient spectroscopy study of electrically active defects in γ-irradiated, n-type, Czochralski-grown Si samples at different temperatures was performed. It was shown that upon irradiation at low temperatures the migration of primary defects was very limited, resulting in formation of only vacancy–O (VO) centers. At higher temperatures these centers continue to form but the profile of the peak suggested that complex clustering of primary defects around VO centers occurred, contributing to the stress in material. After irradiation at higher temperatures the vacancies became more mobile contributing to the formation of multivacancy-related defects. Besides formation of divacancies, a deep level at Ec–0.32eV was detected in the deep level transient spectra. This level was identified as a divacancy–O V2O complex.

Defect Production in γ-Irradiated Silicon at Different Temperatures. I.Kovačević, B.Pivac: Vacuum, 2005, 80[1-3], 223-8