Room-temperature ultrasonic annealing of point radiation defects in the bulk of Si was demonstrated for the first time. The radiation defects in single crystal Si were generated by the exposure to γ-radiation from a 60Co source. A qualitative model of processes in the system of radiation defects under the action of ultrasound was proposed.

Room-Temperature Ultrasonic Annealing of Radiation Defects in Silicon. A.A.Podolyan, V.I.Khivrich: Technical Physics Letters, 2005, 31[5], 408-10