A computer simulation analysis was made of the evolution of defects caused by self-bombardment of crystalline Si at high temperatures. A classical molecular dynamics simulation was followed by defect analysis using the pixel mapping method. The incident Si ion energy was 5keV and the target temperature was 1000K. The aim was to reproduce the experimentally observed {311} planar defects. No long-chain structures were observed in the <110> direction, and nor were appreciable platelet {311} planar defects. However, a significant increase in <110>-oriented self-interstitial dimers was observed, together with a small fraction of linear trimers; which was the initial stage of <110>-rod formation.

Planar Defects in Crystalline Silicon Caused by Self-Irradiation. S.T.Nakagawa, G.Betz: Nuclear Instruments and Methods in Physics Research Section B, 2005, 230[1-4], 210-3