A study of damage depth distribution in Si by elevated temperature O+-ion implantation was performed using three structures: (i) bulk Si, (ii) Si/SiO2/bulk Si, and (iii) SiO2/bulk Si. The samples were implanted at 250C with a dose of 5 x 1016/cm2 at an energy of 185keV. By this approach, the damage depth profile distributes along the SiO2 and Si layers in a different manner according to the sample structure. A comparative analysis of the high-resolution X-ray diffraction spectra taken from the implanted samples permitted the deduction of the spatial separation between vacancy and interstitial-rich layers, which were associated with the presence of negative and positive strained layers, respectively.

Spatial Separation of Vacancy and Interstitial Defects Formed in Si by Oxygen-Ion Irradiation at Elevated Temperature. I.Danilov, H.Boudinov, J.P.de Souza, Y.N.Drozdov: Journal of Applied Physics, 2005, 97[7], 076106 (3pp)