H ion implantation into crystalline Si was known to result in the precipitation of planar defects in the form of platelets. Hydrogen-platelet formation was critical to the process that allows controlled cleavage of Si along the plane of the platelets and subsequent transfer and integration of thinly sliced Si with other substrates. Here it was shown that H-platelet formation was controlled by the depth of the radiation-induced damage and a model was then developed that considered the influence of stress in order to predict correctly the platelet orientation and the depth at which platelet nucleation density was a maximum.

Nucleation and Growth of Platelets in Hydrogen-Ion-Implanted Silicon. M.Nastasi, T.Höchbauer, J.K.Lee, A.Misra, J.P.Hirth, M.Ridgway, T.Lafford: Applied Physics Letters, 2005, 86[15], 154102 (3pp)