Anisotropic surface stresses which were associated with various reconstructions of the (001) surface were measured in situ in a molecular beam epitaxy system. An optical deflection technique was used which involved [1¯10]- and [110]-oriented cantilevers fabricated on thinned wafer areas. Changes in surface stress, which were associated with the As and Ga dimer surface coverages of the c(4 x 4), 2 x 4, 3 x 1 and 4 x 2 reconstructions, were observed while the substrate temperature and molecular flux were varied. Deflection oscillations, detected during growth, related surface stresses to surface roughness or step density.

In situ Observation of Reconstruction Related Surface Stress during Molecular Beam Epitaxial Growth of III-V Compounds J.P.Silveira, F.Briones: Journal of Crystal Growth, 1999, 201-202, 113-7