Many of the defects created by ion implantation into Si could be detected by electron paramagnetic resonance. The main defects observed were isolated point defects such as Si-P3 centers (neutral 4-vacancies), Si dangling bonds in amorphous Si and defects associated with the so-called Σ resonance—a single broad anisotropic line; particular attention was paid to the latter defects as they had the highest population over a wide fluence range. The effects, upon the nature and population of these defects, of changing the fluence, mass and energy of the implanted ions was reported here; as well as the effects of changing the implantation temperature.

Electron Paramagnetic Resonance Characterization of Defects Produced by Ion Implantation into Silicon. R.C.Barklie, C.O’Raifeartaigh: Journal of Physics - Condensed Matter, 2005, 17[22], S2351-60