A model of the formation of donor centers introduced by a combined implantation of Er+ and O+ ions into Si with subsequent thermal annealing was developed. These centers were multi-particle Er–O complexes ErOn with n greater than 3. The competing process of formation of electrically inactive O clusters was taken into account. The model makes it possible to describe the dependence of the activation coefficient for the donor centers on the implantation dose of O ions and, also, the effects of the O ion implantation and annealing temperature on the concentration profiles of the donor centers.

The Influence of Oxygen on the Formation of Donor Centers in Silicon Layers Implanted with Erbium and Oxygen Ions. O.V.Aleksandrov, A.O.Zakharin, N.A.Sobolev: Semiconductors, 2005, 39[7], 742-7