Stability of extended defects created by high fluence He implantation (50keV, 5 x 1016/cm2) from room temperature to 800C was studied using transmission electron microscopy. The results clearly showed that the cavities behaved as good sinks for interstitial type defects generated during ion implantation leading, in some cases, to cavity dissolution. A 3-dimensional so-called phase diagram which was related to the formation and evolution of interstitial-type defects was also proposed; plotted in terms of quantity of damage, annealing time and implantation temperature.

Stability of Defects Created by High-Fluence Helium Implantation in Silicon. M.L.David, M.F.Beaufort, J.F.Barbot: Nuclear Instruments and Methods in Physics Research Section B, 2004, 226[4], 531-6