Accumulation and annealing of radiation defects in Si and in heavily P-doped Si layers implanted with Si+ or P+ ions were studied by the X-ray diffraction method. The observed differences in the introduction rates of stable radiation defects were due to the differences between the intensities of annihilation processes determined by charge states of defects.

Efficiency of Formation of Radiation Defects in Silicon upon Implantation of Silicon and Phosphorus Ions. M.Jadan, A.R.Chelyadinskii, V.Y.Yavid: Nuclear Instruments and Methods in Physics Research Section B, 2004, 225[4], 516-20