The reactive ion implantation in Si at different fluence levels varying from 5 x 1016 to 1018/cm2 was carried out at 30keV to synthesize SiO2, Si3N4 and SixOyNz layers at room temperature. The electron spin resonance measurements were performed on these samples to study the defects. The rapid thermal annealing behavior of defects in N ambient was also studied. The room temperature electron spin resonance studies showed a defect center related to Si dangling bonds at g-values of some 2.0040 to 2.0051. This defect center almost disappears after rapid thermal annealing (1073K, 300s). The spin density was found to depend strongly on the ion-fluence. The low temperature studies indicated the presence of an additional center associated with interface defects at g-values of about 1.999 for low fluence implanted samples. However, this defect center was not observed for samples implanted with high fluence levels (above 5 x 1017/cm2).

Investigation of Defects in Reactive Ion-Implanted Silicon. G.Bhatt, A.D.Yadav, S.K.Dubey, T.K.Gundu Rao: Nuclear Instruments and Methods in Physics Research Section B, 2004, 222[1-2], 75-80