A study was made of the electrical properties of Schottky diodes based on epitaxial n-Si films irradiated by low-energy (300keV) H ions. The implantation of protons at room temperature leads to the formation of shallow donors whose concentration–depth profile coincides with that of the incorporated H. These donor centers were stable on heating up to 150C and were completely annealed at about 250C. Heating above 270C leads to the formation of well-known donor centers with a concentration more than two times that of the centers of the first type. Donors of the second type were annealed in two stages at 375– 425 and 450–525C. The nature of the donor centers of both types was related to the formation and transformation of 2-dimensional H-containing defects in a radiation-damaged crystal.

Donor Center Formation in Silicon Implanted with Hydrogen Ions. Y.M.Pokotilo, A.N.Petukh, V.V.Litvinov: Technical Physics Letters, 2004, 30[11], 962-3