The difference in the annealing behaviors of VO (A-center) in variously dosed neutron-irradiated Czochralski Si (S1: (5 x 1017/cm2) and S2: (1.07 x 1019/cm2) was studied. The vacancy–O complex (VO) was one of the main defects formed in neutron-irradiated Czochralski Si. In this defect, the O atom shared a vacancy, it was bonded to two Si neighbors. Annealed at 200C, divacancies were trapped by Oi to form the V2O (840/cm). With the decrease in the 829/cm (VO) three infra-red absorption bands at 825, 834 and 840/cm (V2O) arose after annealing at 200 to 500C. After being annealed at 450 to 500C, the main absorption bands in the S1 sample were 834, 825 and 889/cm (VO2), and 825 and 919.6/cm (O–V–O) in S2. Annealing of the A-center in variously neutron-irradiated Czochralski-Si consisted of 2 processes. The first was the trapping of VO by interstitial O (Oi) in low-dose neutron-irradiated Czochralski-Si (S1) and the second was the capturing of the wandering vacancy by VO, etc, in high-dose neutron-irradiated Czochralski-Si (S2). The VO2 and O–V–O defects played an important role in the annealing of the A-center. With increasing irradiation dose, the annealing behavior of the A-center changed and the formation of VO2 was depressed.

Infrared Absorption Spectrum Studies of the VO Defect in Fast-Neutron-Irradiated Czochralski Silicon. S.Yang, Y.Li, Q.Ma, L.Liu, X.Xu, P.Niu, Y.Li, S.Niu, H.Li: Journal of Crystal Growth, 2005, 280[1-2], 60-5