Oxygen precipitation and creation of defects in Czochralski grown Si (with an interstitial O concentration of 1.1 x 1018/cm3) subjected to irradiation with neutrons (5MeV, dose 1017/cm2) and treated under atmospheric and high hydrostatic pressures (HP, up to 1.1GPa) at 1270/1400K were investigated by spectroscopic and X-Ray (synchrotron) methods. The presence of point defects created by neutron irradiation stimulates O precipitation and creation of dislocations under HP, especially at 1270K. The effect of pressure treatment was related to changes of concentration and mobility of Si interstitials and vacancies as well as of the VO - type defects.

Oxygen Precipitation and Creation of Defects in Neutron Irradiated Cz-Si Annealed under High Pressure. A.Misiuk, B.Surma, C.A.Londos, J.Bak-Misiuk, W.Wierzchowski, K.Wieteska, W.Graeff: Physica Status Solidi C, 2005, 2[6], 1812-6