Deep level transient spectroscopy and high-resolution Laplace deep level transient spectroscopy were applied to p-type Czochralski Si that contained dislocations that had, and that had not, been locked by O. The stress-induced dislocations were immobilized by O during heat treatment, which prohibited glide under certain applied shear stresses. The deep level transient spectra showed typical broad features between 100 and 320K, characteristic of those seen in other reports on dislocated Si, and several components were present in the Laplace deep level transient spectra. In addition, deep level transient spectra exhibited a sharp narrow peak at 40K at a rate window of 200/s in the case of the locked dislocations, but not in the case of the sample where there was no O locking. Laplace deep level transient spectroscopy showed that this deep level consisted of more than one component and it was proposed that this peak was likely to be due to electrical activity associated with O at the dislocation core. For hole emission at temperatures above 100K, in the sample with unlocked dislocations, Laplace deep level transient spectroscopy detected a change of the emission rate of the carriers from some, but not all, of the components of the broad peak when the Laplace deep level transient spectroscopy fill pulse length was changed. This change was ascribed to band edge modification as the electronic states associated with the dislocation charge up during the fill pulse, and caused local electric field-driven emission of trapped charge during the reverse bias phase of the measurement. The Laplace deep level transient spectroscopy features which remained constant with fill pulse were proposed to be due to point defects in the material, which were not physically near dislocations

High Resolution Deep Level Transient Spectroscopy Applied to Extended Defects in Silicon. J.H.Evans-Freeman, D.Emiroglu, K.D.Vernon-Parry, J.D.Murphy, P.R.Wilshaw: Journal of Physics - Condensed Matter, 2005, 17[22], S2219-27