Magneto-photoconductivity studies were made of GaAs/Ga0.7Al0.3As multiple quantum wells which had been selectively doped with Si donors in the center of the wells and in the barrier layers. Under illumination with a He-Ne laser, marked effects of the D- centres were observed as a function of the electron density. A band-bending model which was associated with a so-called barrier D- center configuration was used to analyze the evolution of the binding energy of the spin-singlet D- transition.

Studies of Far-Infrared Magneto-Photoconductivity of D- Centers in GaAs/AlGaAs Multiple Quantum Wells J.L.Shen, T.Y.Lin, Y.F.Chen, Y.H.Chang: Solid State Communications, 1999, 112[12], 675-80