An investigation was made of optical properties of dislocations in N-doped and N-free Czochralski Si. The dislocations were formed during crystal growth, but not formed during deformation. The results showed that in N-doped samples, a broad band replaced the D1 band of dislocation, regardless of dislocation density. The replacement of D1 band was caused by the non-irradiation combination induced by O precipitation. Moreover, a new emission at 0.975eV was observed in both the N-free and doped samples when the dislocation density was lower than 104/cm2.

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon. D.S.Li, D.R.Yang, E.Leoni, S.Binetti, S.Pizzini: Chinese Physics Letters, 2004, 21[11], 2242-4