Dynamic interaction between dislocations and impurities in Si was investigated by using X-ray topography and the etch-pit technique from the viewpoint of Czochralski growth of Si crystals. Dislocation generation was effectively suppressed by doping of B and co-doping of B and Ge, which was originating in the immobilization of dislocations by preferential segregation of impurities. Dislocation velocity in motion was enhanced by increasing the concentration in B impurities. Change of the lattice parameter due to the impurity doping leads to the generation of misfit dislocations at the seed/crystal interface.

Dislocation–Impurity Interaction in Czochralski-Grown Si Heavily Doped with B and Ge. I.Yonenaga, T.Taishi, X.Huang, K.Hoshikawa: Journal of Crystal Growth, 2005, 275[1-2], e501-5