Theory, models, and experimental phenomena provide evidence of the existence of shallow bands in Si induced by the dislocation strain field. Nevertheless, only deep bands, likely associated with contamination at dislocations, were detected up to now by junction spectroscopy. Here, the first experimental results by junction spectroscopy were presented that assessed the existence of the dislocation-related shallow states. These were found to be located at 70 and 60meV from the valence and conduction band edge, respectively.

Experimental Evidence of Dislocation Related Shallow States in p-Type Si. A.Castaldini, D.Cavalcoli, A.Cavallini, S.Pizzini: Physical Review Letters, 2005, 95[7], 076401 (3pp)