The migration processes of the 30° partial dislocation in Si were investigated using first-principles total-energy calculations. The first reliable determinations were made, of the formation and migration energies of kinks, which were consistent with experiment. The results indicated that the 30° partial dominated the dislocation dynamics in Si and supported a dislocation-glide picture based upon the no-collision model. It was suggested that the interpretation of experimental studies of the dislocation dynamics should be re-examined.

Migration Processes of the 30° Partial Dislocation in Silicon. N.Oyama, T.Ohno: Physical Review Letters, 2004, 93[19], 195502 (3pp)