Generation of dislocations during heat treatment under applied stress was studied in Si samples that underwent different multi-step anneals. Various types of O precipitates (micro-defects) were produced by multi-step anneals - as evidenced by transmission electron microscopy. These micro-defects act as internal sources of dislocations when samples were further heat-treated under applied stress. The mechanical strength was remarkably sensitive to the micro-defect type. The most efficient internal dislocation sources were large stacking faults and dislocation dipoles. The highest mechanical strength was found in samples containing only small platelet precipitates. Generation of Dislocations in Annealed Silicon Wafers under Applied Stress. M.V.Mezhennyi, M.G.Milvidskii, V.Y.Reznik, R.J.Falster: Physica Status Solidi C, 2005, 2[6], 1968-72