A significant increase was observed in the unlocking stress for dislocations in Czochralski-Si, caused by a microwave magnetic field under conditions of spin resonance corresponding to a g-factor value of about 2.0. The result could be interpreted in terms of spin-dependent reactions of O accumulated at dislocations. However, a specific atomistic model for the effect was still lacking.

Spin-Resonant Change of Unlocking Stress for Dislocations in Silicon. M.V.Badylevich, V.V.Kveder, V.I.Orlov, Y.A.Ossipyan: Physica Status Solidi C, 2005, 2[6], 1869-72