Deep level transient spectroscopy was used to study deep levels in plastically deformed n-type Si introduced by gold impurities at concentrations differing by about one order of magnitude. A deep level transient spectroscopic line was observed which showed the signatures of extended localized states and emission characteristics close to that of the gold acceptor level in dislocation-free Si. It was attributed to gold accumulated in the strain-field of dislocations. The amplitude of the C-line typically found in plastically deformed Si showed no correlation with the Au concentration.

Electrical Properties of Gold at Dislocations in Silicon. O.Voss, V.V.Kveder, W.Schröter, M.Seibt: Physica Status Solidi C, 2005, 2[6], 1847-51