Dislocation-related luminescence centers in Si had high stability to a thermal treatment of samples and a relatively low temperature quenching. These properties make them an attractive candidate for production of Si based light emitting diodes. The low-energy part of dislocation-related luminescence in the vicinity of the D1 line was the most promising from this point of view due to its highest temperature stability and best coupling to fiber optics. Actually this part of dislocation-related luminescence could be divided into several bands. One of them with a position 0.807eV was known as the D1 line. The substantial effect on D1 luminescence had O. The line becomes broader and several sub-bands could be identified on the low and high energy side after prolonged annealing of deformed samples. Depending on particular treatment some of these bands could be even more intensive than the original D1 line. The strongest effect was usually observed in O-rich Czochralski crystals. In all cases the presence of dislocations was necessary for the appearance of the low energy bands. Several observations clearly showed that the corresponding recombination centers include the dislocation related defect as well as some O complexes. It implied that inclusion and mutual configuration of constituents defines the energy of optical transitions in the region of D1 band. A review of previous investigations, as well as new results regarding O-dislocation interaction, were presented.

Influence of Oxygen on the Dislocation Related Luminescence Centers in Silicon. E.A.Steinman: Physica Status Solidi C, 2005, 2[6], 1837-41