Dislocation-induced photoluminescence was studied at 4.2K in plastically deformed Si of various impurity contents. The effect of O upon the dislocation-induced photoluminescence spectra was distinctly displayed in Czochralski Si at a density of introduced dislocations of less than 2 x 107/cm2. The effect of P upon the dislocation-induced photoluminescence was observed at concentrations above 1016/cm3 in float-zone and Czochralski Si. The peculiarities of different dislocation-induced photoluminescence spectra were explained by supposing that the D1 and D2 lines were associated with edge-type jogs. The type of dislocation was considered with regard to which defect responsible for each line was located. Some arguments were advanced concerning the effect of the length of ideal 60° dislocations upon their radiation energy.

Dislocation Photoluminescence in Silicon Crystals of Various Impurity Contents. S.A.Shevchenko, A.N.Izotov: Physica Status Solidi C, 2005, 2[6], 1827-31