A new model of recombination-stimulated nucleation and growth of dislocation loops in semiconductors with intense laser generation of electron-hole pairs was developed. The model was shown to describe experimental results on multipulse laser damage of Si surface.

Recombination-Stimulated Growth and Relaxation of Dislocation Loops as a Mechanism of Multi-Pulse Laser Damage of Semiconductors. V.I.Emelyanov, A.V.Rogacheva: Laser Physics Letters, 2004, 1[7], 362-7