Prospects for using the long-wavelength dislocation luminescence line D1 in Si-based light-emitting diodes were considered. The standard spectral position of this line at 807meV, rather than being canonic, depends on the morphology of the dislocation structure and the impurity environment of an individual dislocation. Data on the spectral distribution of luminescence intensity in the region of the D1 line were analyzed in terms of the concentration of interstitial O in a sample, plastic deformation parameters, and thermal treatment. The results obtained suggested that O exerts a dominant effect on the spectral position of line D1 and luminescence intensity in its vicinity. It was shown that the probable structure of recombination centers could be described in terms of the donor–acceptor pair model, in which O complexes serve as donors and the acceptors were structural defects in the dislocation core.

Oxygen-Induced Modification of Dislocation Luminescence Centers in Silicon. E.A.Steinman: Physics of the Solid State, 2005, 47[1], 5-8