Dislocations were introduced into Si at 77K by Vickers indentation. The dislocations were identified to be of shuffle set by transmission electron microscopy including weak-beam imaging technique, high-resolution observation and in situ and ex situ heating.

Direct Evidence for Shuffle Dislocations in Si Activated by Indentations at 77K. K.Asaoka, T.Umeda, S.Arai, H.Saka: Materials Science and Engineering A, 2005, 400-401, 93-6