The dislocation sub-structures of Si, deformed under hydrostatic pressure at room temperature using various deformation conditions, were characterized by means of transmission electron microscopy. This confirmed the occurrence of deformation mechanisms, involving perfect dislocations, under high-stress conditions. Dislocation-line instabilities were found which were consistent with a deep Peierls potential along <123> orientations. The nature of the cores of these perfect dislocations was considered with regard to these observations.

Plastic Deformation by Shuffle Dislocations in Silicon. J.Rabier, M.F.Denanot, J.L.Demenet, P.Cordier: Materials Science and Engineering A, 2004, 387-389, 124-8