Positron trapping in Si deformed under high-stress conditions at room temperature was compared to that in Si plastically deformed at higher temperatures. After room temperature deformation, thermally rather stable vacancy clusters appear. No evidence for positron capture in dislocations was found. In contrast, after high-temperature deformation, positrons were trapped in rather large vacancy clusters and in dislocations acting as combined positron traps. The specific features of positron trapping in Si plastically deformed at room temperature were related to the dislocation core structure and to the inhomogeneous distribution of defects.

Defects in Silicon Plastically Deformed at Room Temperature. H.S.Leipner, Z.Wang, H.Gu, V.V.Mikhnovich, V.Bondarenko, R.Krause-Rehberg, J.L.Demenet, J.Rabier: Physica Status Solidi A, 2004, 201[9], 2021-8