It was shown that after plastic deformation in clean conditions the most efficient recombination defects in Si were dislocation trails. The deep level transient spectrum associated with the defects in the dislocation trails in p-Si were revealed. The thermal annealing effect on the electrical properties of these extended defects was studied. A complex annealing kinetics of defects in the dislocation trails was revealed by the EBIC and deep level transient spectroscopy. It was shown that annealing at 800C essentially decreased the EBIC contrast of dislocation trails. The deep level transient spectrum associated with dislocation trails was also found to disappear after such annealing.

Annealing Effect on the Electrical Activity of Extended Defects in Plastically Deformed p-Si with Low Dislocation Density. O.V.Feklisova, B.Pichaud, E.B.Yakimov: Physica Status Solidi A, 2005, 202[5], 896-900