Structures of the form, GaAs/Ga0.95In0.05As/GaAs, were studied in order to quantify the relationship between misfit dislocation densities and the intensities of satellite peaks which were adjacent to epitaxial-layer Bragg reflections. Triple-axis X-ray diffraction rocking curves, double-axis X-ray topography and plan-view transmission electron microscopy were used to confirm the suggestion that the diffuse scattering satellite peaks were related to the density of misfit dislocations. Symmetrical (004) triple-axis scans along the [110] direction revealed an asymmetry in the satellite heights on each side of the coherent peak. This was attributed to a difference in the populations of the misfit dislocation Burgers vectors. Measurements which were made along the [¯110] direction revealed a reduction in intensity, and more symmetrical lobes. This confirmed that the lobes originated from misfit dislocations, that the difference in lobe intensity provided information concerning the Burgers vectors, and that the lobe periodicity arose from the layer thickness and not from the distance between dislocations. The results also indicated that triple-axis rocking curve measurements could indicate the distribution of misfit dislocation Burgers vectors in semiconductor heterostructures with low dislocation densities.

Asymmetry of Misfit Dislocation Induced Satellite Peaks in Semiconductor Heterostructures J.Leininger, G.D.U'Ren, C.D.Moore, R.Sandhu, M.S.Goorsky: Journal of Physics D, 1999, 32[10A], A8-11