The results of investigation into the effect of H plasma treatment and annealing on the electrical activity of grain boundaries in Si ribbons manufactured with the edge-defined film-fed growth technique were presented. It was shown that hydrogenation with small doses of introduced H leads to decrease of the grain boundary electrical activity, whereas further growth of hydrogenation time gave rise either to saturation or increase of electrical activity for annealed and non-annealed ribbons, respectively. The latter was explained in terms of a model taking into account the concurrence of grain boundary defect passivation and neutralization of B ions in the vicinity of grain boundaries during hydrogenation.

Influence of Low-Energy Ion-Beam Treatment by Hydrogen on Electrical Activity of Grain Boundaries in Polycrystalline Silicon. A.Saad, A.Mazanik, A.Fedotov, J.Partyka, P.Węgierek, P.Żukowski: Vacuum, 2005, 78[2-4], 269-72