Hydrogen and D in bond-centered (BC) and platelet-like configurations were detected in hydrogenated (and deuterated) amorphous Si thin films deposited from SiH4 and SiD4plasmas. Infra-red absorption due to these configurations was measured using in situ multiple total internal reflection Fourier transform infra-red spectroscopy in a differential mode, where changes in the as-deposited a-Si:H(D) films were observed during D2(H2) plasma exposure. This method coupled with preferential replacement of H(D) by D(H) in BC and platelet-like configurations over the isolated bulk SiH(SiD) configurations enabled detection of these modes without interference from the strong SiH(SiD) absorptions. The Si–H(D) stretching modes for BC H and BC D were observed at ~1950 and ~1420/cm, respectively, while those for platelet-like H and D were detected at ~2033 and ~1480/cm, respectively.

Hydrogen in Si–Si Bond Center and Platelet-Like Defect Configurations in Amorphous Hydrogenated Silicon. S.Agarwal, B.Hoex, M.C.M.van de Sanden, D.Maroudas, E.S.Aydil: Journal of Vacuum Science & Technology B, 2004, 22[6], 2719-26