The effects of In-doping (0.04 to 0.59%) at low temperatures were studied with regard to GaAs which had been chemical beam epitaxially deposited onto Si. The 4.2K photoluminescence showed that In contents of 0.04 and 0.29% increased, by 2-fold and 4.5-fold respectively, the intensity of the acceptor bound excitonic recombination at 1.492eV. In the case of samples with 0.29%In, the peak which originated from native defects (perhaps VGa) or complexes involving native defects was reduced in intensity by about 70% as compared with undoped GaAs/Si.

Impurity Reduction and Crystalline Quality Improvement due to Isovalent Doping (In) in GaAs Epilayers on Si Substrate by Chemical Beam Epitaxy S.Saravanan, M.Adachi, N.Satoh, T.Soga, T.Jimbo, M.Umeno: Journal of Crystal Growth, 2000, 209[4], 621-4