Phosphorus-doped Si samples grown by various methods after irradiation by fast neutrons of a WWR-M reactor and subsequent annealing at room temperature were investigated. The calculation of the temperature dependence of effective carrier concentration was carried out in the framework of Gossick's model, taking into account the recharges of defects both in the conducting matrix of n-Si and in the space charge region of defect clusters. The distribution function of electrons in the acceptor level of bistable defect (CiCs)0 was determined in the case when the concentration of this defect was a function of the Fermi level in the conducting matrix of n-Si. The concentration of bistable CiCs defect and its energy level at (Ec - 0.123eV) in the forbidden band of Si were calculated. The absence of reconciliation between the introduction rate of A-centers in n-Si, irradiated by fast neutrons of the reactor, and the concentration of O in 1016-1018/cm3 limits was determined.

Energy-Level Position of Bistable (CiCs)0 Defect in the B Configuration in the Forbidden Band of n-Si. A.Dolgolenko, M.Varentsov, G.Gaidar: Physica Status Solidi B, 2004, 241[13], 2914-22