It was recalled that self-interstitials in Si could aggregate to form rod-like defects having both electrical and optical activity. Local density functional calculations were carried out for both {113} and {111} rod-like defects in order to determine their structures and electrical activity. It was found that small {113} rod-like defects were more stable than {111} rod-like defects, but this reversed for larger defects. The electrical activity of {113} rod-like defects found in deep level transient spectroscopy studies was attributed to the bounding dislocations, and the 0.903eV photoluminescence to vacancy point defects lying on the habit plane.

Electrical and Optical Properties of Rod-Like Defects in Silicon. J.P.Goss, P.R.Briddon, T.A.G.Eberlein, R.Jones, N.Pinho, A.T.Blumenau, S.Öberg: Applied Physics Letters, 2004, 85[20], 4633-5