Kinetic non-lattice Monte Carlo atomistic simulations were used to investigate the role played by Si interstitials in B cluster dissolution. It was shown that the presence of Si interstitials from an oxidizing anneal stabilized B clusters and slowed B cluster dissolution, as compared to annealing in an inert ambient. An analysis was also made of the influence of injected Si interstitials from end-of-range defects; due to pre-amorphizing implants, upon B deactivation and reactivation processes. It was observed that the B cluster evolution could be clearly related to the evolution of Si interstitial defects at the end-of-range. The minimum level of activation occurred when the Si interstitial supersaturation was low because the end-of-range defects had dissolved, or reached very stable configurations such as dislocation loops.

Role of Silicon Interstitials in Boron Cluster Dissolution. M.Aboy, L.Pelaz, L.A.Marqués, P.López, J.Barbolla, R.Duffy, V.C.Venezia, P.B.Griffin: Applied Physics Letters, 2005, 86[3], 031908 (3pp)