High levels of Be incorporation and diffusion during the molecular beam epitaxial growth of homojunctions and heterojunctions were shown, for the first time, to be strongly affected by interfacial and space charge electric fields. The onset of fast Be interstitial diffusion was governed mainly by the growth temperature, and partially affected by the III-V flux ratio. Experimental results indicated that the Be diffusion species at the growth surface was positively charged; as predicted by the hole tunnelling surface implantation model. Therefore, Be diffusion slowed down in the presence of higher opposing space-charge electric fields.

Heterojunction and Interface Space Charge Effects on Interstitial Be Diffusion during Molecular Beam Epitaxial Growth Y.C.Pao: Journal of Crystal Growth, 1999, 201-202, 202-5