A point defect injection study of implanted (185keV F, 2.3 x 1015/cm2) Si was reported. After inert annealing at 1000C, F peaks were seen at depths of 0.3Rp and Rp and a shoulder between 0.5 to 0.7Rp. The shallow peak (at 0.3Rp) was significantly smaller under interstitial injection than under both inert and vacancy injection conditions. For longer annealing under interstitial injection, both the shallow peak and the shoulder were eliminated. These results supported earlier work suggesting that the shallow F peak was due to vacancy-F clusters which were responsible for suppression of B thermal diffusion in Si. The elimination of the shallow F peak and the shoulder was explained by the annihilation of vacancies in the clusters with injected interstitials.

Study of Fluorine Behavior in Silicon by Selective Point Defect Injection. M.N.Kham, H.A.W.El Mubarek, J.M.Bonar, P.Ashburn: Applied Physics Letters, 2005, 87[1], 011902 (3pp)