A combination of X-ray diffraction methods and electron microscopy was used for the structural study of Czochralski Si crystals highly doped by As. For as-grown crystals a weak strain field and probable clustering of As-impurity atoms follow from section topography and a reduction in the Borrmann effect intensity. For annealed crystals, it was shown that precipitates and dislocation loops were formed during annealing. The defects were located in highly distorted stripes lying nearly parallel to the crystal surface with period 200–300µm. The concentration of the defects drastically decreased along the crystal radius from the center to the periphery and along the growth axis from the seed. The average size of the defects obtained from the diffuse scattering increased with increasing distance from the center to the periphery and along the growth axis from the seed. One concludes that the dependence of the defect parameters observed was associated with the change in O concentration along the crystal radius and growth axis.

X-Ray Diffraction Study of Defect Distribution in Czochralski Grown Silicon Highly Doped by As. R.N.Kyutt, I.L.Shulpina, G.N.Mosina, V.V.Ratnikov, L.M.Sorokin, M.P.Scheglov, S.S.Ruvimov, J.Kearns, V.Todt: Journal of Physics D, 2005, 38[10A], A111-6