Plane-wave X-ray topography was used to characterize grown-in defects in Si crystals grown by the Czochralski method at a slow speed. The 220 reflection rocking curves of the sample crystal were measured in a symmetric Laue case. Oscillatory profiles were clearly observed in the rocking curves and were in good agreement with those calculated from the dynamical theory of X-ray diffraction. Images of the grown-in defects were observed in the plane-wave X-ray topographs of the 220 reflection. The density of the defects was determined as 300/cm3. The lattice strain around the defects was evaluated as 10-6 from the dependence of the defect image contrast on the X-ray incident angles. The defect images were analyzed by using a grown-in defect model of entangled dislocation loop clusters.

Plane-Wave Synchrotron X-Ray Topography Observation of Grown-In Microdefects in a Slowly Pulled Cz-Silicon Crystal. S.Iida, S.Kawado, T.Maehama, K.Kajiwara, S.Kimura, J.Matsui, Y.Suzuki, Y.Chikaura: Journal of Physics D, 2005, 38[10A], A23-7