A novel quantum well structure was proposed in which GaAsP/Ga0.87In0.13P was to be grown onto a GaP/Si substrate having a small lattice mismatch (1.4%) with respect to the Si substrate. A 2-dimensional growth mode was maintained during growth of all of the layers. Cross-sectional imaging by means of transmission electron microscopy revealed that the density of threading dislocations was lowest in light-emitting device structures grown onto Si substrates. The lattice mismatch of 1.4% was accommodated at the Ga0.87In0.13P/GaP and GaP/Si hetero-interfaces by introducing misfit dislocations.

High-Quality GaAsP/InGaP Quantum Well Structure Grown on Si Substrate with Very Few Threading Dislocations Y.Fujimoto, H.Yonezu, S.Irino, K.Samonji, K.Momose, N.Ohshima: Japanese Journal of Applied Physics - 1, 1999, 38[12A], 6645-9