A variety of defects in multi-crystalline Si was detected using laser scattering tomography tool. Band-to-band photoluminescence excited by the applied laser scattering tomography laser beam was applied for monitoring defect-specific recombination activity. For demonstrating the capability of this setup, defect-rich sections of cast multi-crystalline Si and crucible-free grown multi-crystalline Si were investigated. In the former material, laser scattering tomography defects were mostly located close to grain boundaries, impacting their recombination activity. In the latter material, most of laser scattering tomography defects were embedded in low-lifetime grains. The combined laser scattering tomography/photoluminescence information permitted some conclusions to be drawn with regard to recombination-controlled quality of multi-crystalline Si.

Investigation of Defect Structures in Multi-Crystalline Silicon by Laser Scattering Tomography. M.Naumann, F.Kirscht: Thin Solid Films, 2005, 487[1-2], 188-92