Light-induced defect creation in hydrogenated polymorphous Si:H was investigated using electron spin resonance measurements, and was compared with that in hydrogenated amorphous Si. Light-induced defect creation occurred at room temperature for both types of film prepared at 250C. Thermal annealing of light-induced defects was also investigated as a function of temperature. Differing behaviors of annealing characteristics of polymorphous Si:H to those of amorphous Si:H were observed. In particular, a decrease in the light-induced defect creation efficiency was observed with repeated light-soaking–annealing cycles and was considered with respect to the H bonding in polymorphous Si:H films.

Light-Induced Defect Creation in Hydrogenated Polymorphous Silicon. K.Morigaki, K.Takeda, H.Hikita, P.Roca i Cabarrocas: Materials Science and Engineering B, 2005, 121[1-2], 34-41