It was noted that the atomic structure of large agglomerates of interstitials in Si crystals, i.e. rod-like defects, had previously been extensively investigated by using transmission electron microscopy. Much less was known about the electronic properties of these defects. The electric-dipole spin resonance signals and photoluminescence spectra from Si samples with rod-like defects permitted the investigation of electronic properties and formation/evolution peculiarities of the defects. The results obtained clearly showed the qualitative evolution of the electric-dipole spin resonance signals from rod-like defects with annealing time. That is, new signals of modified symmetry were formed upon annealing, and those detected in the earlier stages of annealing disappeared. A comparison of the electric-dipole spin resonance results with published transmission electron microscopic data permitted the determination of atomic structures related to distinct electric-dipole spin resonance signals. Correlations of the electric-dipole spin resonance signals and peculiarities in the photoluminescence spectra for similar samples were reported.

Rod-Like Defects in CZ-Si Investigated by Spin Resonance and Photoluminescence Spectroscopies. T.Mchedlidze, S.Binetti, A.Le Donne, M.Suezawa, S.Pizzini: Physica Status Solidi C, 2005, 2[6], 1807-11