The aim of this study was to gain insight into the effect of the charge state of non-equilibrium vacancies upon the processes that occurred during irradiation and annealing in Si crystals. Here, n-Si float-zone crystals with an electron concentration of 6 x 1013/cm3 were irradiated with 25MeV protons at 300K. The irradiated crystals were then studied by using the Hall method at 77 to 300K. It was shown that the nature and energy spectrum of radiation defects in n-Si crystals were controlled mainly by the charge state of non-equilibrium vacancies.

The Effect of the Charge State of Nonequilibrium Vacancies on the Nature of Radiation Defects in n-Si Crystals. T.A.Pagava: Semiconductors, 2005, 39[4], 400-1